Effect of Radio-Frequency Power on the Composition of BiVO4 Thin-Film Photoanodes Sputtered from a Single Target

BiVO4 films were fabricated by radio frequency (RF) sputtering from a single target. The deposited found to be rich in Bi, and the reason for Bi-richness was investigated. It inferred Monte Carlo simulation that, during sputtering, transfer process of target atoms through argon gas played major role this phenomenon. resulted an imbalanced ratio Bi V, arising difference atom mass interaction radius. high RF power effective adjusting Bi/V ratio, influencing yield. This type preferential maintained diffusion bulk surface. with monoclinic scheelite crystal structures obtained at values exhibit photocatalytic performances beneficial photoanodic applications.